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柒號(hào)芯城電子商務(wù)(深圳)有限公司
13年
0755-8366305618922805453,18929374037,18922803401連0755-82537787深圳市福田區(qū)華強(qiáng)北路1019號(hào)華強(qiáng)廣場(chǎng)D座23樓11016516
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C3M0120065J PDF資料
- 資料下載
- 制造商:CREE[Cree, Inc]
- PDF文件大?。?148.64 Kbytes
- PDF文件頁數(shù):共11頁
- 描述:Silicon Carbide Power MOSFET C3MTM MOSFET Technology
C3M0120065J技術(shù)規(guī)格
- SeriesC3M?
- PackageTube
- FET TypeN-Channel
- TechnologySiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)650 V
- Current - Continuous Drain (Id) @ 25°C21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)15V
- Rds On (Max) @ Id, Vgs157mOhm @ 6.76A, 15V
- Vgs(th) (Max) @ Id3.6V @ 1.86mA
- Gate Charge (Qg) (Max) @ Vgs26 nC @ 15 V
- Vgs (Max)+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds640 pF @ 400 V
- FET Feature-
- Power Dissipation (Max)86W (Tc)
- Operating Temperature-40°C ~ 175°C (TJ)
- Mounting TypeSurface Mount
- Supplier Device PackageTO-263-7
- Package / CaseTO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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