�Y�x�Y(ji��)��������(y��ng)�̹������S�r(sh��)��������(w��)
- ����(y��ng)��
- ��̖(h��o)
- Ʒ��
- ���b
- ��̖(h��o)
- ��(k��)�攵(sh��)��
- ��ע
- ԃ�r(ji��)
-
��̖(h��o)о������̄�(w��)�����ڣ�����˾
13��
0755-8366305618922805453��18929374037��18922803401�B0755-82537787�����и���^(q��)�A��(qi��ng)��·1019̖(h��o)�A��(qi��ng)�V��(ch��ng)D��23��11016516
-
-
-
-
�����ջ�
-
������о����댧(d��o)�w����˾
10��
13267088774(��̖ͬ(h��o))Sam�����и���^(q��)�A��(qi��ng)�������1̖(h��o)��10A8240���I(y��ng)Ʒ�ƣ�TI/���݃x����ST/�ⷨ��MICROCHIP/о��ADI/�����Z��ALLEGRO/��������NXP/�����֡�ON/��ɭ����RENESAS/���_��ROHM/�_ķ��ALTERA/����������CYPRESS/ِ����˹��INFINEON/Ӣ�w�衢ISS01011808
-
IPI029N06NG
- INFINEON��
- TO-262��
- 18+��
- 6520��
- ԭ�b��Ʒ��
-


IPI030N10N3 PDF�Y��
- �Y�����d
- �����̣�ISC[Inchange Semiconductor Company Limited]
- PDF�������304.57 Kbytes
- PDF��(y��)��(sh��)����2�(y��)
- ������isc N-Channel MOSFET Transistor
IPI030N10N3 G���g(sh��)Ҏ(gu��)��
- ���b/�⚤��PG-TO262-3
- ���b�L(f��ng)��ThroughHole
- ͨ����(sh��)����1Channel
- ���w�ܘO�ԣ�N-Channel
- Vds-©Դ�O����늉���100V
- Id-�B�m(x��)©�O�����100A
- Rds On-©Դ��(d��o)ͨ��裺3mOhms
- Vgs - �ŘO-Դ�O늉���20V
- ��С�����ضȣ�-55C
- ������ضȣ�+175C
- ���ã�Single
- Pd-���ʺ�ɢ��300W
- ͨ��ģʽ��Enhancement
- �߶ȣ�9.45mm
- �L(zh��ng)�ȣ�10.2mm
- ���w����ͣ�1N-Channel
- ���ȣ�4.5mm
- �½��r(sh��)�g��28ns
- �����r(sh��)�g��58ns
- �����P(gu��n)�]���t�r(sh��)�g��84ns
- ���ͽ�ͨ���t�r(sh��)�g��34ns
- Packing Type��TUBE
- Moisture Level��NA
- RDS (on) max��3.0m?
- IDpuls max��400.0A
- VDS max��100.0V
- ID max��100.0 A
- QG (typ @10V)��155.0 nC
- Package��I2PAK (TO-262)
- Rth��0.5 K/W
- Operating Temperature min max��-55.0 ��C 175.0 ��C
- Budgetary Price ?�/1k��1.91
- Ptot max��300.0W
- Polarity��N
- Coss��1940.0 pF
- Ciss��11100.0 pF
- VGS(th) min max��2.0V 3.5V
- VGS(th) (typ) min max��2.7 V 2.0 V 3.5 V
- �o(w��)�U��r/RoHs���o(w��)�U/����RoHs
ُ(g��u)�I����ԃ�a(ch��n)ƷՈ(q��ng)?zh��)ԃ�r(ji��)��Ϣ��(3������������õ��؏�(f��))
IPI029N06NG���P(gu��n)��̖(h��o)