�Y�x�Y(ji��)��������(y��ng)�̹������S�r(sh��)��������(w��)
- ����(y��ng)��
- ��̖(h��o)
- Ʒ��
- ���b
- ��̖(h��o)
- ��攵(sh��)��
- ��ע
- ԃ�r(ji��)
MMBF0202PLT1 PDF�Y��
- �Y�����d
- �����̣�ONSEMI[ON Semiconductor]
- PDF�������88.25 Kbytes
- PDF�ļ�퓔�(sh��)����8�
- ������Power MOSFET 300 mAmps, 20 Volts
MMBF0202PLT1���g(sh��)Ҏ(gu��)��
- Current - Continuous Drain (Id) @ 25�� C��300mA
- Drain to Source Voltage (Vdss)��20V
- FET Feature��Logic Level Gate
- FET Type��MOSFET P-Channel, Metal Oxide
- Gate Charge (Qg) @ Vgs��2.7nC @ 10V
- Input Capacitance (Ciss) @ Vds��50pF @ 5V
- Mounting Type��Surface Mount
- Package / Case��TO-236-3, SC-59, SOT-23-3
- Power - Max��225mW
- Product Change Notification��View
- Rds On (Max) @ Id, Vgs��1.4 Ohm @ 200mA, 10V
- Supplier Device Package��SOT-23-3
- Vgs(th) (Max) @ Id��2.4V @ 250��A
- ����TԴ늉�����20
- ���©Դ늉���20
- ��߹����ضȣ�150
- ͨ��ģʽ��Enhancement
- ��(bi��o)��(zh��n)���b���Q��SOT-23
- ������ضȣ�-55
- ������ͣ�P
- ���b��Tape and Reel
- ���©Դ��裺1400@10V
- ÿ��(g��)оƬ��Ԫ����(sh��)��1
- ����(y��ng)�̷��b��ʽ��SOT-23
- ����ʺ�ɢ��225
- ����B�m(x��)©�O�����0.3
- ���_��(sh��)��3
- �U�ΠGull-wing
ُ�I����ԃ�a(ch��n)ƷՈ?zh��)ԃ�r(ji��)��Ϣ��(3������������õ��؏�(f��))
MMBF0202PLT1���P(gu��n)��̖(h��o)