�Y�x�Y(ji��)��������(y��ng)�̹������S�r(sh��)��������(w��)
- ����(y��ng)��
- ��̖(h��o)
- Ʒ��
- ���b
- ��̖(h��o)
- ��(k��)�攵(sh��)��
- ��ע
- ԃ�r(ji��)
-
��̖(h��o)о������̄�(w��)�����ڣ�����˾
13��
0755-8366305618922805453��18929374037��18922803401�B0755-82537787�����и���^(q��)�A��(qi��ng)��·1019̖(h��o)�A��(qi��ng)�V��(ch��ng)D��23��11016516
-
-
-
-
�����ջ�
-
������о����댧(d��o)�w����˾
10��
13267088774(��̖ͬ(h��o))Sam�����и���^(q��)�A��(qi��ng)�������1̖(h��o)��10A8240���I(y��ng)Ʒ�ƣ�TI/���݃x����ST/�ⷨ��MICROCHIP/о��ADI/�����Z��ALLEGRO/��������NXP/��������ON/��ɭ����RENESAS/���_��ROHM/�_ķ��ALTERA/����������CYPRESS/ِ����˹��INFINEON/Ӣ�w����ISS01011808
-
XP-2012SGC
- KINGBRIGHT��
- ��
- 18+��
- 6520��
- ԭ�b��Ʒ��
-
XP202A0003MR_12 PDF�Y��
- �Y�����d
- �����̣�TOREX[Torex Semiconductor]
- PDF�ļ���С��144.33 Kbytes
- PDF�ļ��(y��)��(sh��)����5�(y��)
- ������P-channel 4V (G-S) MOSFET
XP202A0003MR-G���g(sh��)Ҏ(gu��)��
- Series-
- PackageTape & Reel (TR)
- FET TypeP-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)30 V
- Current - Continuous Drain (Id) @ 25��C5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)4V, 10V
- Rds On (Max) @ Id, Vgs45mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
- Vgs (Max)��20V
- Input Capacitance (Ciss) (Max) @ Vds435 pF @ 10 V
- FET Feature-
- Power Dissipation (Max)1W
- Operating Temperature150��C
- Mounting TypeSurface Mount
- Supplier Device PackageSOT-23
- Package / CaseTO-236-3, SC-59, SOT-23-3
ُ(g��u)�I����ԃ�a(ch��n)ƷՈ(q��ng)?zh��)ԃ�r(ji��)��Ϣ��(3������������õ��؏�(f��))
XP-2012SGC���P(gu��n)��̖(h��o)
![P(gun)]](/imgs/dlgclose.gif "P(gun)]")
